US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Dec. 2 for "Multigate device having reduced contact resistivity" (Belgian Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,456, issued on Dec. 2, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Multigate device having reduced contact resistivity" was invented by Georgios Vellianitis (Heverlee, Belgium) and Blandine Duriez (Brussels).

According to the abstract* released by the U.S. Patent & Trademark Office: "An exemplary method includes forming an opening in an interlevel dielectric (ILD) layer. The opening in the ILD layer exposes a doped epitaxial layer. The method further includes performing an in-situ doping deposition process, an annealing process, and an etching process to form a doped semiconductor layer over the doped epitaxial layer. The doped semiconductor lay...