US Patent Issued to Taiwan Semiconductor Manufacturing on Dec. 2 for "Method of manufacturing semiconductor devices and a semiconductor device" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,509, issued on Dec. 2, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Method of manufacturing semiconductor devices and a semiconductor device" was invented by Chun-Hung Chen (Hsinchu, Taiwan), Chih-Hung Hsieh (Hsinchu, Taiwan) and Jhon Jhy Liaw (Zhudong Township, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a method of manufacturing a semiconductor device, a first-conductivity type implantation region is formed in a semiconductor substrate, and a carbon implantation region is formed at a side boundary region of the first-conductivity type implantation region."

The patent was filed on Jan. 12, 2024, under...