US Patent Issued to Taiwan Semiconductor Manufacturing on Dec. 2 for "Method of manufacturing a semiconductor device having insulation fin structures" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,449, issued on Dec. 2, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Method of manufacturing a semiconductor device having insulation fin structures" was invented by Pei Yu Lu (Hsinchu, Taiwan) and Je-Ming Kuo (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and method of manufacture which utilize isolation structures between semiconductor regions is provided. In embodiments different isolation structures are formed between different fins in different regions with different spacings. Some of the isolation structures are formed using flowable processes. The use of such isolation s...