US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Dec. 2 for "Method and device for boosting performance of FinFETs via strained spacer" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,476, issued on Dec. 2, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Method and device for boosting performance of FinFETs via strained spacer" was invented by Kai-Chieh Yang (Hsinchu, Taiwan), Wei Ju Lee (Kaohsiung, Taiwan), Li-Yang Chuang (Hsinchu, Taiwan), Pei-Yu Wang (Hsinchu, Taiwan), Ching-Wei Tsai (Hsinchu, Taiwan) and Kuan-Lun Cheng (Hsin-Chu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and a method of forming the same are provided. A semiconductor device according to an embodiment includes a P-type field effect transistor (PFET) and an N-type field effect transistor (NFET). T...