ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,497, issued on Dec. 2, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Metal gate patterning" was invented by Tefu Yeh (Kaohsiung, Taiwan), Cheng-Chieh Tu (Hsinchu, Taiwan), Hao-Hsin Chen (Keelung, Taiwan), Jo-Chun Hung (Hsinchu, Taiwan), Ying-Liang Chuang (Hsinchu, Taiwan), Ming-Hsi Yeh (Hsinchu, Taiwan) and Kuo-Bin Huang (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a method of forming gate structures for n-type and p-type transistors. The method includes: forming an interfacial layer and high-K (HK) dielectric layer for the gate structures; forming an n-type metal layer over the HK...