US Patent Issued to Taiwan Semiconductor Manufacturing on Dec. 2 for "Heterostructure channel layer for semiconductor devices" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,453, issued on Dec. 2, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Heterostructure channel layer for semiconductor devices" was invented by Wen-Yi Lin (Tainan, Taiwan), Shi-Sheng Hu (Tainan, Taiwan) and Chao-Chi Chen (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure describes a semiconductor structure having a heterostructure channel layer. The semiconductor structure includes a substrate and a fin structure on the substrate. The fin structure includes a channel layer and a bottom layer between the channel layer and the substrate. The channel layer includes first, second, and thi...