US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Dec. 2 for "Gate dielectric having a non-uniform thickness profile" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,505, issued on Dec. 2, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Gate dielectric having a non-uniform thickness profile" was invented by Pang-Hsuan Liu (Hsinchu, Taiwan), Kuan-Lin Yeh (Hsinchu, Taiwan), Chun-Sheng Liang (Changhua County, Taiwan) and Hsin-Che Chiang (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A first dielectric layer is formed over upper and side surfaces of a semiconductor fin structure. A mask layer is formed over a first portion of the first dielectric layer disposed over the upper surface of the fin structure. The mask layer and the first dielectric layer have different ...