ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,500,142, issued on Dec. 16, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Semiconductor devices including through vias and methods of forming the same" was invented by Li-Zhen Yu (New Taipei, Taiwan), Huan-Chieh Su (Tianzhong Township, Taiwan), Lin-Yu Huang (Hsinchu, Taiwan) and Chih-Hao Wang (Baoshan Township, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Methods of forming through vias for providing connections between a front-side of a substrate and a backside of the substrate and semiconductor devices including the same are disclosed. In an embodiment, a semiconductor device includes a gate structure on a su...