US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Dec. 16 for "Semiconductor device having reduced impurity diffusion" (Belgian, American Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,638, issued on Dec. 16, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device having reduced impurity diffusion" was invented by Martin Christopher Holland (San Jose, Calif.) and Marcus Johannes Henricus Van Dal (Linden, Belgium).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a method of manufacturing a semiconductor device, a gate structure is formed over a fin structure. A source/drain region of the fin structure is recessed. A first semiconductor layer is formed over the recessed source/drain region. A second semiconductor layer is formed over the first semiconductor layer. The fin structure is...