US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Dec. 16 for "Multi-gate field-effect transistors and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,658, issued on Dec. 16, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Multi-gate field-effect transistors and methods of forming the same" was invented by Yu-Fan Peng (Hsinchu, Taiwan), Yuan-Ching Peng (Hsinchu, Taiwan), Yu-Bey Wu (Hsinchu, Taiwan), Yu-Shan Lu (Hsinchu County, Taiwan), Hung Yu Lai (Hsinchu, Taiwan), Chen-Yu Chen (Taipei, Taiwan), Wen-Yun Wang (Taipei, Taiwan) and Tang Ming Lee (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a fin extending from a substrate and oriented lengthwise in a first direction, where the fin includes a stack of semiconduc...