ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,626, issued on Dec. 16, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Magnetic device structure and methods of forming the same" was invented by Jui-Lin Chen (Taipei, Taiwan), Hsin-Wen Su (Hsinchu, Taiwan), Shih-Hao Lin (Hsinchu, Taiwan), Po-Sheng Lu (Hsinchu, Taiwan), Chenchen Jacob Wang (Hsinchu, Taiwan), Yuan Hao Chang (Hsinchu, Taiwan) and Ping-Wei Wang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetic device structure is provided. In some embodiments, the structure includes one or more first transistors, a magnetic device disposed over the one or more first transistors, a plurality ...