US Patent Issued to Taiwan Semiconductor Manufacturing on Dec. 16 for "Ferroelectric FET-based content-addressable memory" (Taiwanese Inventor)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,499,923, issued on Dec. 16, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Ferroelectric FET-based content-addressable memory" was invented by Shih-Lien Linus Lu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An efficient FeFET-based CAM is disclosed which is capable of performing normal read, write but has the ability to match input data with don't-care. More specifically, a Ferroelectric FET Based Ternary Content Addressable Memory is disclosed. The design in some examples utilizes two FeFETs and four MOSFETs per cell. The CAM can be written in columns through multi-phase writes. It can be used a norma...