US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 4 for "Semiconductor structures and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,993, issued on Aug. 4, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor structures and methods of forming the same" was invented by Wen-Chiung Tu (New Taipei City, Taiwan), Dian-Hau Chen (Hsinchu, Taiwan), Chen-Chiu Huang (Taichung City, Taiwan) and Hsiang-Ku Shen (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor structures and methods are provided. An exemplary method includes forming a first conductive feature in a dielectric layer, forming a metal-insulator-metal (MIM) capacitor over the dielectric layer, forming a first passivation structure over the MIM capacitor, ...