US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 4 for "Semiconductor device having isolation structure to reduce current leakage" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,743, issued on Aug. 4, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device having isolation structure to reduce current leakage" was invented by Hung-Yu Yen (Hsinchu, Taiwan), Wei-Ting Yeh (Hsinchu, Taiwan), Ko-Feng Chen (Hsinchu, Taiwan) and Keng-Chu Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method is provided for forming a semiconductor device. A fin feature is formed on a semiconductor substrate, and a dummy gate feature is formed over the fin feature. The fin feature includes a sacrificial portion disposed over the semiconductor substrate, and a fin portion disposed ...