US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 4 for "Semiconductor device having front side and back side source/drain contacts" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,744, issued on Aug. 4, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device having front side and back side source/drain contacts" was invented by Cheng-Chi Chuang (Hsinchu, Taiwan), Li-Zhen Yu (Hsinchu, Taiwan), Huan-Chieh Su (Hsinchu, Taiwan), Chun-Yuan Chen (Hsinchu, Taiwan), Lin-Yu Huang (Hsinchu, Taiwan) and Chih-Hao Wang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes semiconductor device structure includes a first dielectric layer. A first plurality of nanostructures are disposed on the first dielectric layer, with the first plurality of nanostructures overlying ...