ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,806, issued on Aug. 4, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsin-Chu, Taiwan).
"Semiconductor device and method of making" was invented by Wen-Sheng Wang (Hsin-Chu, Taiwan), Yi-Hsuan Fan (New Taipei City, Taiwan) and Yen-Ting Chen (Changhua County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device is provided. The semiconductor device includes a substrate, a first epitaxial layer over the substrate, a first photodiode and a second photodiode in the first epitaxial layer, and a trench isolation structure between the first photodiode and the second photodiode. The first photodiode includes a first dope...