ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,917, issued on Aug. 4, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Pyroelectric device for a semiconductor device" was invented by Fu-Hai Li (Tainan City, Taiwan), Kuen-Yi Chen (Hsinchu City, Taiwan), Yi Ching Ong (Hsinchu, Taiwan), Kuo-Ching Huang (Hsinchu City, Taiwan) and Harry Hak Lay Chuang (Zhubei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A pyroelectric generator may be included in the same semiconductor device as a radio frequency (RF) switch (e.g., a phase-change material (PCM) RF switch and/or other types of RF switch). The pyroelectric generator includes a pyroelectric material layer bet...