ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,702,040, issued on Aug. 4, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Low temperature substrate bonding method" was invented by Zheng-Yong Liang (Hsinchu, Taiwan), Yu-Yun Peng (Hsinchu, Taiwan), Keng-Chu Lin (Hsinchu, Taiwan) and Wei-Ting Yeh (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes: forming, on a first substrate, a first bonding layer including a first metal oxide material in an amorphous state; forming, on a second substrate, a second bonding layer including a second metal oxide material in an amorphous state; annealing the first and second bonding layers using a laser so...