US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 4 for "Low power intermediate pre-charge operations in memory" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,700,437, issued on Aug. 4, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Low power intermediate pre-charge operations in memory" was invented by Yorinobu Fujino (Hsinchu, Taiwan) and Yoshisato Yokoyama (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Memory devices, circuits, and a method of operating the same are disclosed. In one aspect, a memory device includes a memory cell coupled between a first bit line and a second bit line. The memory cell includes a write circuit configured to write data to the memory cell via the first bit line and the second bit line during a write operation. The memory cell in...