US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 4 for "Layer-by-layer formation of through-substrate via" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,980, issued on Aug. 4, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Layer-by-layer formation of through-substrate via" was invented by Tsung-Chieh Hsiao (Changhua County, Taiwan), Ke-Gang Wen (Hsinchu, Taiwan), Liang-Wei Wang (Hsinchu City, Taiwan) and Dian-Hau Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit (IC) device includes a substrate. The IC device includes a multi-layer interconnect structure disposed over a first side of the substrate. The multi-layer interconnect structure includes a plurality of metal layers. The IC device includes a first portion of a throug...