ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,983, issued on Aug. 4, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Integrated circuit device and manufacturing method" was invented by Chin-Shen Lin (Hsinchu, Taiwan), Luk Lu (Hsinchu, Taiwan), Hao-Tien Kan (Hsinchu, Taiwan) and Ren-Zheng Liao (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit (IC) device includes a substrate with a power control circuit, front and back side metal layers, and first and second feed through vias (FTVs). The front side metal layer has first and second front side power rails. The back side metal layer has first and second back side power rails. Th...