US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 4 for "Insulating cap on contact structure" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,990, issued on Aug. 4, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Insulating cap on contact structure" was invented by Kuo-Chiang Tsai (Hsinchu City, Taiwan), Fu-Hsiang Su (Zhubei City, Taiwan), Ke-Jing Yu (Kaohsiung City, Taiwan) and Jyh-Huei Chen (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure is provided. The semiconductor device structure includes a gate electrode layer formed over a substrate, and a first insulating capping feature formed over the gate electrode layer. The semiconductor device structure includes a source/drain contact structure formed adja...