US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 4 for "Fin structure with reduced defects and manufacturing method thereof" (Taiwanese Inventor)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,934, issued on Aug. 4, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Fin structure with reduced defects and manufacturing method thereof" was invented by Shahaji B. More (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Implementations described herein provide a method that includes implanting a dopant and carbon in a portion of a substrate of a semiconductor device. The method also includes depositing a first silicon-based layer on the portion of the substrate, the first silicon-based layer reacting with the carbon to form a diffusion region on the portion of the substrate. The method further incl...