US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 4 for "Ferroelectric random access memory device and method" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,714, issued on Aug. 4, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Ferroelectric random access memory device and method" was invented by I-Che Lee (Taipei, Taiwan), Yen-Chieh Huang (Changhua, Taiwan), Huai-Ying Huang (Taipei, Taiwan), Kai-Wen Cheng (Taichung, Taiwan), Yu-Ming Lin (Hsinchu, Taiwan) and Chung-Te Lin (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the present disclosure provide a method including forming a gate electrode over a substrate, forming a ferroelectric layer over the gate electrode, forming a channel layer over the ferroelectric layer, forming a capping laye...