US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 4 for "Doping profile for strained source/drain region" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,751, issued on Aug. 4, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Doping profile for strained source/drain region" was invented by Hsueh-Chang Sung (Zhubei City, Taiwan), Tsz-Mei Kwok (Hsinchu, Taiwan), Kun-Mu Li (Zhudong Township, Taiwan), Tze-Liang Lee (Hsinchu, Taiwan) and Chii-Horng Li (Zhubei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to an integrated chip. The integrated chip includes a gate structure arranged over a substrate and a source/drain region arranged within the substrate along a side of the gate structure. The source/drain region includes a first lay...