ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,731, issued on Aug. 4, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Carrier structure for etch-back silicon-on-insulator process" was invented by Hung-Chang Chang (Tainan City, Taiwan), Chia-Shiung Tsai (Hsin-Chu, Taiwan) and Eugene Chen (Taipei City, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Some implementations herein describe a carrier structure and techniques of forming a semiconductor device using the carrier structure. The carrier structure includes a core layer formed from a layer of a high bandgap material, a backside layer stack formed on a backside surface of the layer of the high bandgap mater...