US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 4 for "Back end of line resistor structure" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,995, issued on Aug. 4, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Back end of line resistor structure" was invented by Shih-Yu Liao (Hsinchu City, Taiwan) and Chung-Liang Cheng (Changhua, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure describes a resistor structure with a dielectric layer, trenches, a metal layer, a semiconductor layer, and an insulating layer. The dielectric layer is disposed above electrical components formed on a substrate. The trenches are disposed in the dielectric layer and separated from each other by a dielectric region of the dielectric layer. The metal layer...