US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 26 for "Structure and method for interlevel dielectric layer with regions of differing dielectric constant" (Taiwanese Inventor)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,400,948, issued on Aug. 26, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Structure and method for interlevel dielectric layer with regions of differing dielectric constant" was invented by Anhao Cheng (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit includes a plurality of transistors and an interlevel dielectric layer formed over the transistors. The interlevel dielectric layer includes a first region and a second region with a higher dielectric constant than the first region. The difference in dielectric constant is produced by curing the first region shielding the second region f...