US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 26 for "Passivation structure for a thin film transistor" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,402,350, issued on Aug. 26, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Passivation structure for a thin film transistor" was invented by Wu-Wei Tsai (Taoyuan, Taiwan) and Hai-Ching Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In some embodiments, the present disclosure relates to a device that includes an active layer, a gate electrode, a passivation structure, a source contact, and a drain contact arranged over a substrate. The gate electrode is arranged over the substrate and is spaced apart from the active layer by a gate dielectric layer. The passivation structure is arranged over the acti...