US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 26 for "Heterogenous bonding layers for direct semiconductor bonding" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,400,996, issued on Aug. 26, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Heterogenous bonding layers for direct semiconductor bonding" was invented by Kuang-Wei Cheng (Hsinchu, Taiwan) and Chyi-Tsong Ni (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A first semiconductor device and a second semiconductor device may be directly bonded using heterogeneous bonding layers. A first bonding layer may be formed on the first semiconductor device and the second bonding layer may be formed on the second semiconductor device. The first bonding layer may include a higher concentration of hydroxy-containing silicon...