US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 25 for "Transistor source/drain regions and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,823, issued on Aug. 25, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Transistor source/drain regions and methods of forming the same" was invented by Tsung-Han Chuang (Tainan City, Taiwan), Zhi-Chang Lin (Zhubei City, Taiwan), Shih-Cheng Chen (New Taipei City, Taiwan), Jung-Hung Chang (Yuanlin City, Taiwan), Chien Ning Yao (Hsinchu, Taiwan), Kai-Lin Chuang (Chia-Yi City, Taiwan), Kuo-Cheng Chiang (Zhubei City, Taiwan) and Chih-Hao Wang (Baoshan Township, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In an embodiment, a device includes: first nanostructures; a first undoped semiconductor layer contacting a f...