US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 25 for "Semiconductor structures with improved metal capping layers" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,120, issued on Aug. 25, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor structures with improved metal capping layers" was invented by Cheng-Hsiang Wu (New Taipei City, Taiwan), Tsung-Yang Hsieh (New Taipei City, Taiwan), Chien-Chang Lee (Hsinchu City, Taiwan) and Wen-Tung Chuang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor structures and fabrication methods are provided. In one example, a method includes forming a first dielectric layer on a semiconductor structure. The semiconductor structure includes a substrate and a multi-layer interconnect (MLI) structure on ...