ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,794, issued on Aug. 25, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor devices and methods of fabricating the same" was invented by Hsiao Po-Kai (Hsinchu, Taiwan), Cheng-Wei Chen (Hsinchu, Taiwan), Yi-Ting Chen (Hsinchu, Taiwan), Pei Tsang Ho (Hsinchu, Taiwan) and Wei-Yang Tseng (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a semiconductor fin. The semiconductor device includes a first silicon oxide layer contacting the semiconductor fin at a first interface and including nitrogen at a first concentration. The semiconductor device includes a second silic...