ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,144, issued on Aug. 25, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device with polygonal inductive device" was invented by Wen-Sheng Chen (Taipei City, Taiwan), An-Hsun Lo (Hsinchu City, Taiwan), En-Hsiang Yeh (Hsin-Chu City, Taiwan) and Tzu-Jin Yeh (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a polygonal inductive device disposed on a first layer on a substrate, the polygonal inductive device including a first line portion; a first conductive line disposed on a second layer on the substrate; a second conductive line disposed on a third la...