US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 25 for "Semiconductor device having an offset source/drain feature and method of fabricating thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,720, issued on Aug. 25, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device having an offset source/drain feature and method of fabricating thereof" was invented by Chih-Chuan Yang (Hsinchu, Taiwan), Chia-Hao Pao (Kaohsiung City, Taiwan), Wen-Chun Keng (Hsinchu County, Taiwan), Lien Jung Hung (Taipei, Taiwan) and Ping-Wei Wang (Hsin-Chu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and method of fabricating thereof where the device includes a fin structure between a first isolation region and a second isolation region. A first source/drain feature is formed over a r...