US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 25 for "Semiconductor device and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,145, issued on Aug. 25, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device and method for forming the same" was invented by Shu-Cheng Lin (Hsinchu County, Taiwan), Shih Yang Chen (Taoyuan City, Taiwan) and Tsung-Yu Chiang (New Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a method for manufacturing a semiconductor device. The method includes: forming a first metal structure in a first ILD layer; planarizing the first metal structure and the first ILD layer, wherein the planarizing generates a groove at an interface of the first metal structure ...