ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,821, issued on Aug. 25, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device and manufacturing method thereof" was invented by Pei-Yu Wang (Hsinchu City, Taiwan), Wang-Chun Huang (Kaohsiung City, Taiwan), Cheng-Ting Chung (Hsinchu City, Taiwan) and Yi-Bo Liao (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes channel layers, a mask structure, a gate structure and a source/drain pattern. The channel layers are stacked vertically apart along a first direction over a substrate. The mask s...