US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 25 for "Phase-change random access memory device and methods of making the same" (Taiwanese Inventor)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,051, issued on Aug. 25, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Phase-change random access memory device and methods of making the same" was invented by Jau-Yi Wu (Zhubei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A phase-change memory device and method of manufacturing the same, the memory device including: a substrate; a bottom electrode disposed over the substrate; a top electrode disposed over the bottom electrode; and a phase-change layer disposed between the top and bottom electrodes. The phase change layer includes a chalcogenide Ge-Sb-Te (GST) material that includes at least 30 at % Ge...