US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 25 for "Multi-gate devices with improved performance and methods of fabricating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,847, issued on Aug. 25, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Multi-gate devices with improved performance and methods of fabricating the same" was invented by Ko-Cheng Liu (Hsinchu City, Taiwan), Chang-Miao Liu (Hsinchu City, Taiwan) and Huiling Shang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor structures and methods are provided. In an embodiment, a semiconductor structure includes a substrate including a first mesa structure and a second mesa structure, an isolation feature extending between the first mesa structure and the second mesa structure, a first vertic...