US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 25 for "Interconnect structure with dielectric cap layer and etch stop layer stack" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,125, issued on Aug. 25, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Interconnect structure with dielectric cap layer and etch stop layer stack" was invented by Chao-Chun Wang (Hsinchu, Taiwan) and Jen Hung Wang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor device includes: forming a first conductive feature in a first dielectric layer disposed over a substrate; forming a metal cap layer over an upper surface of the first conductive feature distal from the substrate; selectively forming a dielectric cap layer over an upper surface of the first dielectric layer a...