US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 25 for "Integrated circuit device and manufacturing method thereof" (Taiwanese Inventor)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,837, issued on Aug. 25, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Integrated circuit device and manufacturing method thereof" was invented by Yung-Shih Cheng (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit device includes a transistor, a dielectric layer, a first vertical connecting structure. The transistor includes a gate structure. The dielectric layer surrounds the transistor. The first vertical connecting structure extends through the dielectric layer. The gate contact via is over the gate structure. The front-side metallization pattern is over the transistor. ...