US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 25 for "Ferroelectric memory device comprising a chimney seed structure and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,762, issued on Aug. 25, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Ferroelectric memory device comprising a chimney seed structure and method for forming the same" was invented by Kuen-Yi Chen (Hsinchu City, Taiwan), Yi-Hsuan Chen (Taoyuan City, Taiwan), Yi Ching Ong (Hsinchu, Taiwan) and Kuo-Ching Huang (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments of the present disclosure are directed towards a ferroelectric memory device comprising a chimney seed structure. A ferroelectric layer overlies a bottom electrode layer, and a top electrode layer overlies the ferroelectric l...