ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,827, issued on Aug. 25, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Epitaxial structures grown on material with a crystallographic orientation of {110}" was invented by Wei-Min Liu (Hsinchu, Taiwan), Tsz-Mei Kwok (Hsinchu, Taiwan), Yung-Chun Yang (Taipei, Taiwan), Cheng-Yen Wen (Taichung, Taiwan), Li-Li Su (Hsinchu, Taiwan), Chii-Horng Li (Hsinchu, Taiwan), Yee-Chia Yeo (Hsinchu, Taiwan) and Hui-Lin Huang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is an epitaxial structure and a method for forming such a structure. The method includes forming a fin structure on a substrate, wherei...