ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,818, issued on Aug. 25, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Bonding and isolation techniques for stacked transistor structures" was invented by Kuan-Kan Hu (Hsinchu, Taiwan), Han-De Chen (Hsinchu City, Taiwan), Ku-Feng Yang (Hsinchu County, Taiwan), Chen-Fong Tsai (Hsinchu City, Taiwan), Chi On Chui (Hsinchu City, Taiwan) and Szuya Liao (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Bonding and isolation techniques for stacked device structures are disclosed herein. An exemplary method includes forming a first insulation layer on a first device component, forming a second insulation la...