US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 25 for "Back side illuminated image sensor with reduced sidewall-induced leakage" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,881, issued on Aug. 25, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Back side illuminated image sensor with reduced sidewall-induced leakage" was invented by Shuang-Ji Tsai (Guiren Township, Taiwan), Dun-Nian Yaung (Taipei City, Taiwan), Jen-Cheng Liu (Hsin-Chu City, Taiwan), Wen-De Wang (Minsyong Township, Taiwan) and Hsiao-Hui Tseng (Tainan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a method of fabricating an image sensor device. An exemplary includes forming a plurality of radiation-sensing regions in a substrate. The substrate has a front surface, a back surface, and a sidewall...