ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,716,129, issued on Aug. 25, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Atomic layer deposition tool and method" was invented by Chung-Ting Ko (Kaohsiung City, Taiwan), Wen-Ju Chen (New Taipei City, Taiwan), Wan-Chen Hsieh (Hsinchu, Taiwan), Ming-Fa Wu (Kaohsiung City, Taiwan), Tai-Chun Huang (Hsinchu, Taiwan), Yung-Cheng Lu (Hsinchu, Taiwan) and Chi On Chui (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In an embodiment, a method of forming a semiconductor device includes forming a hydrophobic coating on an inner surface of an exhaust line, connecting the exhaust line to a semiconductor processing ch...