US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 11 for "Semiconductor device structure having a multi-layer conductive feature and method making the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,965, issued on Aug. 11, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Semiconductor device structure having a multi-layer conductive feature and method making the same" was invented by Chun-Yuan Chen (HsinChu, Taiwan), Chia-Hao Chang (Hsinchu City, Taiwan), Cheng-Chi Chuang (New Taipei City, Taiwan), Yu-Ming Lin (Hsinchu City, Taiwan) and Chih-Hao Wang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a method of forming a semiconductor device structure. The method includes forming a trench in a dielectric layer on a semiconductor substrate; forming a bottom metal...