US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 11 for "Method of manufacturing semiconductor devices including a cap insulating layer" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,905, issued on Aug. 11, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method of manufacturing semiconductor devices including a cap insulating layer" was invented by Shih-Hang Chiu (Taichung City, Taiwan) and Chi On Chui (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In method of manufacturing a semiconductor device, an opening is formed over a first conductive layer in a dielectric layer, a second conductive layer is formed over the first conductive layer in the opening without forming the second conductive layer on at least an upper surface of the dielectric layer, a third conductive laye...