US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 11 for "Method of forming a cap layer for sealing an air gap, and semiconductor device" (Taiwanese Inventor)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,961, issued on Aug. 11, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method of forming a cap layer for sealing an air gap, and semiconductor device" was invented by Yu-Lien Huang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a cap layer for sealing an air gap is provided. The method includes forming a line feature over a substrate, forming a contact etch stop layer (CESL) on a sidewall of the line feature, forming a sacrificial layer on a sidewall of the CESL, forming a liner layer on a sidewall of the sacrificial layer, removing the sacrificial layer to form an air gap whi...