US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 11 for "Bottom electrode structure in memory device" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,901, issued on Aug. 11, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Bottom electrode structure in memory device" was invented by Chao-Yang Chen (Hsin-Chu, Taiwan), Chun-Yang Tsai (Hsinchu City, Taiwan), Kuo-Ching Huang (Hsinchu City, Taiwan), Wen-Ting Chu (Kaohsiung City, Taiwan), Pili Huang (Hsin-Chu, Taiwan) and Cheng-Jun Wu (Hsin-Chu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In some embodiments, the present disclosure relates to a method of forming an integrated chip. The method includes forming a reactivity reducing coating over one or more lower interconnect layers disposed over a substrate. A bo...